| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor laser chip whose heat dissipation can be improved. SOLUTION: The semiconductor laser chip 100 includes a substrate 10 having a top surface 10a and a reverse surface 10b, nitride semiconductor layers 11 to 18 formed on the top surface 10a of the substrate 10, an optical waveguide 20 (ridge part 19) formed in the nitride semiconductor layers, an n-side electrode 23 formed on the reverse surface 10b of the substrate 10, and cut parts 5 formed in regions including the substrate 10 and extending along the optical waveguide 20 (ridge part 19). The cut parts 5 are formed in both side end faces 40 of the semiconductor laser chip 100 respectively, and metal layers 24 connected to the n-side electrode 23 are formed on cut surfaces 5a of those cut parts 5. COPYRIGHT: (C)2011,JPO&INPIT |
