| 摘要 |
PROBLEM TO BE SOLVED: To provide a method and system for heat treatment of a workpiece. SOLUTION: One method includes measuring a present intensity of a radiation which is irradiated thermally from a first surface of the workpiece, and identifying a current temperature of the first surface, in response to the present intensity and at least one previous thermal characteristic of the first surface. Preferably, the workpiece includes a semiconductor wafer, and the first and the second surfaces include each wafer device side and each substrate side, respectively. Preferably, the current temperature of the device side is identified while the device side, for example, is irradiated by an irradiation flash which has a duration time shorter than a thermal conductive time of the wafer. The temperature of the device side can be identified responding to the previous device side temperature, and the temperature of the device side can be identified responding to the temperature of the wafer side which is different from the previous temperature of the device side and a temperature history of the wafer. COPYRIGHT: (C)2011,JPO&INPIT
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