| 摘要 |
The method of manufacturing the solid-state imaging apparatus of the present invention includes: forming elements of an imaging region and a peripheral region on a substrate; forming a plurality of wiring patterns such that the wiring patterns of the peripheral region are denser than those of the imaging region; and forming an insulating film interposed between the wiring patterns. Further, the manufacturing method includes: etching and removing at least a part of the insulating film on the peripheral region; and planarizing a surface of the insulating film by a CMP process. |
