发明名称 VERFAHREN ZUR HERSTELLUNG EINER DÜNNSCHICHTSILIZIUMSOLARZELLE
摘要 According to the present invention, sufficient light trapping effect can be exhibited and series resistance can be kept small, by sequentially forming a silicon based low refractive index layer and a thin silicon based interface layer on a backside of a photoelectric conversion layer observed from a light incident side, and as a result a silicon based thin film solar cell may be provided efficiently and at low cost.
申请公布号 AT512467(T) 申请公布日期 2011.06.15
申请号 AT20040747712T 申请日期 2004.07.12
申请人 KANEKA CORPORATION 发明人 SAWADA, TORU;KOI, YOHEI;SASAKI, TOSHIAKI;YOSHIMI, MASASHI;GOTO, MASAHIRO;YAMAMOTO, KENJI
分类号 H01L31/075;H01L31/052 主分类号 H01L31/075
代理机构 代理人
主权项
地址