| 摘要 |
A charged-particle beam lithography apparatus includes a projection system that projects a charged-particle beam, and images a pattern on a substrate with the projected charged-particle beam. The projection system has a symmetrical magnetic doublet lens configured to generate a magnetic field, and an electro-static lens configured to generate an electrical field superimposed on the magnetic field. The electro-static lens includes an electrode configured to apply, on at least the pupil plane of the symmetrical magnetic doublet lens, a potential to accelerate a charged-particle beam that has entered the symmetrical magnetic double lens.
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