发明名称 |
Method of manufacture an integrated circuit system with through silicon via |
摘要 |
A method of manufacture of an integrated circuit system includes: providing a substrate including an active device; forming a through-silicon-via into the substrate; forming an insulation layer over the through-silicon-via to protect the through-silicon-via; forming a contact to the active device after forming the insulation layer; and removing the insulation layer.
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申请公布号 |
US7960282(B2) |
申请公布日期 |
2011.06.14 |
申请号 |
US20090470028 |
申请日期 |
2009.05.21 |
申请人 |
GLOBALFOUNDRIES SINGAPORE PTE. LTD. |
发明人 |
YELEHANKA PRADEEP RAMACHANDRAMURTHY;TAN DENISE;LEK CHUNG MENG;THIAM THOMAS;LAM JEFFREY C.;HSIA LIANG-CHOO |
分类号 |
H01L21/768 |
主分类号 |
H01L21/768 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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