发明名称 Method of manufacture an integrated circuit system with through silicon via
摘要 A method of manufacture of an integrated circuit system includes: providing a substrate including an active device; forming a through-silicon-via into the substrate; forming an insulation layer over the through-silicon-via to protect the through-silicon-via; forming a contact to the active device after forming the insulation layer; and removing the insulation layer.
申请公布号 US7960282(B2) 申请公布日期 2011.06.14
申请号 US20090470028 申请日期 2009.05.21
申请人 GLOBALFOUNDRIES SINGAPORE PTE. LTD. 发明人 YELEHANKA PRADEEP RAMACHANDRAMURTHY;TAN DENISE;LEK CHUNG MENG;THIAM THOMAS;LAM JEFFREY C.;HSIA LIANG-CHOO
分类号 H01L21/768 主分类号 H01L21/768
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