发明名称 BUMP STRESS MITIGATION LAYER FOR INTEGRATED CIRCUITS
摘要 <p>An apparatus comprises a semiconductor substrate having a device layer, a plurality of metallization layers, a passivation layer, and a metal bump formed on the passivation layer that is electrically coupled to at least one of the metallization layers. The apparatus further includes a solder limiting layer formed on the passivation layer that masks an outer edge of the top surface of the metal bump, thereby making the outer edge of the top surface non-wettable to a solder material.</p>
申请公布号 KR20110063811(A) 申请公布日期 2011.06.14
申请号 KR20117007718 申请日期 2009.12.07
申请人 INTEL CORPORATION 发明人 LEE KEVIN J.
分类号 H01L21/60 主分类号 H01L21/60
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