发明名称 Photomask unit, exposing method and method for manufacturing semiconductor device
摘要 A photomask unit includes a mask substrate having patterns arranged at a pitch P; and a pellicle which protects the mask substrate, wherein the pellicle is configured so that transmittance of incident light of an incident angle &thetas; (0°<&thetas;<90°) is higher than transmittance of incident light of an incident angle 0°.
申请公布号 US7960075(B2) 申请公布日期 2011.06.14
申请号 US20070939030 申请日期 2007.11.13
申请人 KABUSHIKI KAISHA TOSHIBA 发明人 NAGAI SATOSHI;FUKUHARA KAZUYA;ITOH MASAMITSU;KAWANO KENJI;TANAKA SATOSHI
分类号 G02B5/08;G03F1/62;G03F7/20;H01L21/027 主分类号 G02B5/08
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