发明名称 |
Photomask unit, exposing method and method for manufacturing semiconductor device |
摘要 |
A photomask unit includes a mask substrate having patterns arranged at a pitch P; and a pellicle which protects the mask substrate, wherein the pellicle is configured so that transmittance of incident light of an incident angle &thetas; (0°<&thetas;<90°) is higher than transmittance of incident light of an incident angle 0°.
|
申请公布号 |
US7960075(B2) |
申请公布日期 |
2011.06.14 |
申请号 |
US20070939030 |
申请日期 |
2007.11.13 |
申请人 |
KABUSHIKI KAISHA TOSHIBA |
发明人 |
NAGAI SATOSHI;FUKUHARA KAZUYA;ITOH MASAMITSU;KAWANO KENJI;TANAKA SATOSHI |
分类号 |
G02B5/08;G03F1/62;G03F7/20;H01L21/027 |
主分类号 |
G02B5/08 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|