发明名称 Power saving sensing scheme for solid state memory
摘要 Methods and apparatus are disclosed, such as those involving a solid state memory device. One such method includes selecting a plurality of memory cells in a memory array. States of a plurality of data bits stored in the selected plurality of memory cells are determined. In determining the states of the plurality of data bits, a portion of the plurality of data bits are sensed faster than others. The plurality of data bits are sequentially provided as an output. In one embodiment, the portion of the plurality of data bits includes the first bit of the sequential output of the memory device.
申请公布号 US7961526(B2) 申请公布日期 2011.06.14
申请号 US20090502932 申请日期 2009.07.14
申请人 MICRON TECHNOLOGY, INC. 发明人 JUNG CHULMIN;KIM KANG YONG
分类号 G11C7/00 主分类号 G11C7/00
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