发明名称 |
Multiple-gate MOSFET device and associated manufacturing methods |
摘要 |
One embodiment of the present invention relates to a method of fabricating a multi-gate transistor. During the method a second gate electrode material is selectively removed from a semiconductor structure from which the multi-gate transistor is formed, thereby exposing at least one surface of a first gate electrode material. The exposed surface of the first gate electrode material is deglazed. Subsequently, the first gate electrode material is removed. Other methods and devices are also disclosed.
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申请公布号 |
US7960234(B2) |
申请公布日期 |
2011.06.14 |
申请号 |
US20070726516 |
申请日期 |
2007.03.22 |
申请人 |
TEXAS INSTRUMENTS INCORPORATED |
发明人 |
HUFFMAN CRAIG HENRY;XIONG WEIZE;CLEAVELIN CLOVES RINN |
分类号 |
H01L21/336 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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