发明名称 |
POWER SEMICONDUCTOR DEVICE |
摘要 |
FIELD: electricity. ^ SUBSTANCE: power semiconductor device includes power locked thyristor and cascode MOS-driver (metal-oxide-semiconductor); crystals of power locked thyristor and MOS-transistors are placed in one pellet housing, and nanocrystal diamond films obtained by gas-phase synthesis or plasma-gas-phase synthesis are used as heat conducting electric insulating layers. Groups of parallel connected crystals uniformly located around crystal of locked thyristor can be used as MOS-transistors. ^ EFFECT: development of high-power hybrid switch on power locked thyristor with cascode MOS-driver in one pellet housing. ^ 2 cl, 3 dwg |
申请公布号 |
RU2420830(C1) |
申请公布日期 |
2011.06.10 |
申请号 |
RU20090138934 |
申请日期 |
2009.10.22 |
申请人 |
FEDERAL'NOE GOSUDARSTVENNOE UNITARNOE PREDPRIJATIE "VSEROSSIJSKIJ EHLEKTROTEKHNICHESKIJ INSTITUT IM. V.I. LENINA" (FGUP VEHI) |
发明人 |
SURMA ALEKSEJ MARATOVICH;PRIKHOD'KO ANNA IVANOVNA;RJABOV MIKHAIL ALEKSANDROVICH |
分类号 |
B82B1/00;H01L29/744 |
主分类号 |
B82B1/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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