| 摘要 |
An epitaxial growth on a wafer of semi-conducting material, e.g. silicon, is effected by forming a coating of silicon oxide on the wafer as a mask, forming an opening in the mask, and heating the wafer to the temperature required for epitaxial growth while applying a semi-conducting material to the opening by vapour deposition, whereby epitaxial growth is limited laterally, to the periphery of the opening. Preferably heating of the cleaned silicon wafer is effected above 1050 DEG C., e.g. 1200-1650 DEG C., whereby the masking oxide is slowly evaporated in the presence of silicon vapour, and leaves a mesa-type epitaxial growth free from a surrounding mask. Acceptor or donor substances, e.g. B and Sb, may be added to build up junction resistors. |
