SEMICONDUCTOR DEVICE MANUFACTURING METHOD

摘要

The present invention provides a method for producing semiconductor devices by which the fraction defective upon division into chips is reduced and the yield is enhanced. A method for producing semiconductor devices according to the present invention includes a dislocation-density evaluation step of measuring a dislocation density of sections of GaN substrates, the sections intersecting with principal surfaces of the GaN substrates, and selecting a GaN substrate in which the dislocation density is a predetermined value or less; and a division step of, after a functional device portion is epitaxially grown on the GaN substrate having been selected in the dislocation-density evaluation step, dividing the GaN substrate into chip-shaped parts.