发明名称 Method of increasing the area of a useful layer of material transferred onto a support
摘要 A composite structure that includes front faces of the first and second substrates that are molecularly bonded to each other. The dimensions of the second substrate outline are larger than the first substrate outline, and a peripheral side of the second substrate substantially borders the second front face and is oriented generally perpendicularly with respect thereto. The front faces are molecularly bonded such that the outline of the first front face is disposed at least partially within the outline of the second front face. A peripheral ring extending around the first front face and facing the first substrate, in which bonding between the front faces is weak or absent, has a maximum width of less than about 0.5 mm.
申请公布号 US7956441(B2) 申请公布日期 2011.06.07
申请号 US20070858164 申请日期 2007.09.20
申请人 S.O.I.TEC SILICON ON INSULATOR TECHNOLOGIES 发明人 MALEVILLE CHRISTOPHE
分类号 H01L29/06;H01L21/762 主分类号 H01L29/06
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