发明名称 |
Semiconductor device having trench gate structure |
摘要 |
The present invention provides a vertical MOSFET which has striped trench gate structure which can secure avalanche resistance without increasing Ron. A vertical MOSFET 100 comprises a plurality of gate trenches 7 which is arranged in stripes, an array which is sandwiched with the plurality of gate trenches 7 and includes N+ source regions 4N+ and P+ base contact regions 5P+, and a diode region (anode region 6P+) which is formed so as to contact with two gate trenches 7. The N+ source regions 4N+ and the base contact regions 5P+ are alternately arranged along a longitudinal direction of the gate trench 7. Size of the diode region (anode region 6P+) corresponds to at least one of the N+ source regions 4N+ and two of the P+ base contact regions 5P+.
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申请公布号 |
US7956409(B2) |
申请公布日期 |
2011.06.07 |
申请号 |
US20080232074 |
申请日期 |
2008.09.10 |
申请人 |
RENESAS ELECTRONICS CORPORATION |
发明人 |
YAMAMOTO HIDEO;KOBAYASHI KENYA;KANEKO ATSUSHI |
分类号 |
H01L29/76;H01L29/94;H01L31/062;H01L31/113;H01L31/119 |
主分类号 |
H01L29/76 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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