| 摘要 |
A trench-type Schottky semiconductor device and a method for fabricating the trench-type Schottky semiconductor device are disclosed. The method includes the steps of forming an epitaxial (EPI) layer atop a silicon substrate, forming a nitride layer atop the EPI layer, patterning a plurality of windows in the nitride layer into an active region and a termination region, forming a plurality of trenches in the active and termination regions such that the plurality of trenches in the termination regions are spaced apart from each other so as to form a plurality of mesas, lining the first type of trenches with a gate oxide layer, and converting the mesas to oxide mesas; and then applying a barrier layer metal to the mesas in the device active area and in the termination trenches.
|
