发明名称 |
POSITIVE RESIST COMPOSITION FOR IMMERSION EXPOSURE AND PATTERN FORMING METHOD |
摘要 |
A positive resist composition for immersion exposure includes the following (A) to (D): (A) a resin capable of decomposing by an action of an acid to increase a solubility of the resin in an alkali developer; (B) a compound capable of generating an acid upon irradiation with an actinic ray or radiation; (C) a resin having at least either one of a fluorine atom and a silicon atom; and (D) a mixed solvent containing at least one kind of a solvent selected from the group consisting of solvents represented by any one of the following formulae (S1) to (S3) as defined in the specification, in which a total amount of the at least one kind of the solvent is from 3 to 20 mass % based on all solvents of the mixed solvent (D). |
申请公布号 |
KR20110059840(A) |
申请公布日期 |
2011.06.07 |
申请号 |
KR20117004073 |
申请日期 |
2009.09.25 |
申请人 |
FUJIFILM CORPORATION |
发明人 |
YAMAMOTO KEI;SAEGUSA HIROSHI |
分类号 |
G03F7/039;G03F7/004;G03F7/38;H01L21/027 |
主分类号 |
G03F7/039 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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