| 摘要 |
A method for adjusting metal gate work function of PMOS device is provided. The method includes: firstly using a physical vapor deposition method, depositing a metal nitride film or metal film used as a metal gate electrode on a high K dielectric film; then using an ion implantation method, implanting elements like Al, Pt, Ru, Ga or Ir, et al. into the metal gate electrode; using high temperature annealing, driving the doped metal ions to accumulate at the interface between the metal gate electrode and the high K gate dielectric film or react with the interface to create dipoles, so as to adjust metal gate effective work function. The method can be widely applied and is simple to operate. It can effectively adjust metal gate work function and is well compatible with the CMOS process. |
