发明名称 CLEAVING OF SUBSTRATES
摘要 An improved process of substrate cleaving and a device to perform the cleaving are disclosed. In the traditional cleaving process, a layer of microbubbles is created within a substrate through the implantation of ions of a gaseous species, such as hydrogen or helium. The size and spatial distribution of these microbubbles is enhanced through the use of ultrasound energy. The ultrasound energy causes smaller microbubbles to join together and also reduces the straggle. An ultrasonic transducer is acoustically linked with the substrate to facilitate these effects. In some embodiments, the ultrasonic transducer is in communication with the platen, such that ultrasound energy can be applied during ion implantation and/or immediately thereafter. In other embodiments, the ultrasonic energy is applied to the substrate during a subsequent process, such as an anneal.
申请公布号 US2011127885(A1) 申请公布日期 2011.06.02
申请号 US201113016525 申请日期 2011.01.28
申请人 VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC. 发明人 RAMAPPA DEEPAK A.
分类号 G10K9/122 主分类号 G10K9/122
代理机构 代理人
主权项
地址
您可能感兴趣的专利