| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a semiconductor device of a novel structure. <P>SOLUTION: The semiconductor device includes a first transistor having a channel forming region disposed on a semiconductor material-containing substrate, an impurity region formed to nip the channel forming region, a first gate insulating layer on the channel forming region, a first gate electrode on the first gate insulating layer, and a first source electrode and a first drain electrode electrically connected with the impurity region; and a second transistor having a second gate electrode on a semiconductor material-containing substrate, a second gate insulating layer on the second gate electrode, an oxide semiconductor layer on the second gate insulating layer, and a second source electrode and a second drain electrode electrically connected with the oxide semiconductor layer. <P>COPYRIGHT: (C)2011,JPO&INPIT</p> |
