发明名称 |
METHOD FOR PRODUCING ITO SINTERED COMPACT, AND METHOD FOR MANUFACTURING ITO SPUTTERING TARGET |
摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method for producing an ITO sintered compact that suppresses nodule formation. <P>SOLUTION: The method for producing an ITO sintered compact related to an embodiment of the invention includes a step of sintering a first mixed powder obtained by mixing a first indium oxide powder having a first specific surface area with a first tin oxide powder; a step of producing a crushed powder having a second specific surface area same as or larger than the first specific surface area by crushing the sintered compact of the first mixed powder; and a step of sintering a second mixed powder obtained by mixing a second indium oxide powder having a third specific surface area same as or larger than the first specific surface area with a second tin oxide powder. An ITO sintered compact having tin oxide dispersed minutely and uniformly is thus obtained. The nodule formation is more greatly suppressed by using the ITO sintered compact for a sputtering target than by conventional methods. <P>COPYRIGHT: (C)2011,JPO&INPIT |
申请公布号 |
JP2011105550(A) |
申请公布日期 |
2011.06.02 |
申请号 |
JP20090263146 |
申请日期 |
2009.11.18 |
申请人 |
ULVAC JAPAN LTD |
发明人 |
YAMADA MASAHARU;HIDAKA NAOTO |
分类号 |
C04B35/00;C23C14/34 |
主分类号 |
C04B35/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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