THIN FILM TRANSISTOR, ORGANIC ELECTROLUMINESCENT DISPLAY DEVICE, METHOD OF FABRICATING THIN FILM TRANSISTOR AND METHOD OF FABRICATING ORGANIC ELECTROLUMINESCENT DISPLAY DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a thin film transistor in which characteristics of a semiconductor layer are further improved, an organic electroluminescent display device with the thin film transistor, and methods of fabricating the thin film transistor and the organic electroluminescent display device.

SOLUTION: The thin film transistor includes a buffer layer on a substrate, a semiconductor layer including source/drain regions and one or a plurality of channel regions on the buffer layer, a gate insulating film provided over the entire surface of the substrate, a gate electrode provided on the gate insulating film, an interlayer insulating film provided over the entire surface of the substrate, and source/drain electrodes disposed on the interlayer insulating film and electrically connected to the semiconductor layer. A polysilicon layer of the channel region of the semiconductor layer includes only a low angle grain boundary, and a high angle grain boundary is disposed in a region of the semiconductor layer that is apart from the channel region.

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