| 摘要 |
PROBLEM TO BE SOLVED: To promote alignment on the same chip as for a general integrated circuit manufactured in the manufacturing process for the CMOS in order to have a horizontal structure in addition to a high breakdown voltage, high output current, and fast working speed in a power MOS transistor. SOLUTION: The trench-type power MOS transistor is provided with a trench-type gate region having a gate conductor 312 and an insulating layer 310, wherein the insulating layer 310 forms a thin side wall region between the gate conductor 312 and a well region 308, thus forming a thick side wall region between the gate conductor 312 and a double diffusive doped region 306 and forming a thick bottom region as well between the gate conductor 312 and a deep well region 304. COPYRIGHT: (C)2011,JPO&INPIT
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