发明名称 MASK FOR FILM DEPOSITION
摘要 PROBLEM TO BE SOLVED: To provide a mask for film deposition capable of allowing a vapor deposition to be performed accurately on a desired position while suppressing positional displacement of vapor deposition pattern. SOLUTION: The mask for film deposition includes a chip having mask openings formed therein corresponding to a deposition pattern according to which a vapor deposition material evaporated from a vapor deposition source is deposited on a deposition target substrate, and a support substrate for supporting the chip, wherein the chip is used with its one surface being superimposed on the target substrate in the vapor deposition. In the mask for film deposition, a heat insulation layer 41 is formed on the vapor deposition source side of the support substrate 30, and a thermal shield layer 42 is formed throughout the entire vapor deposition source side of the support substrate 30 so as to cover the whole exposed portion of the heat insulation layer 41. COPYRIGHT: (C)2011,JPO&INPIT
申请公布号 JP2011105997(A) 申请公布日期 2011.06.02
申请号 JP20090263658 申请日期 2009.11.19
申请人 SEIKO EPSON CORP 发明人 SHINTO SUSUMU
分类号 C23C14/04 主分类号 C23C14/04
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