| 摘要 |
<P>PROBLEM TO BE SOLVED: To prevent damage to an interlayer dielectric and a final insulation film by lateral stress caused by a sideslip of the tip of a probing needle on a pad. <P>SOLUTION: A substrate recess 1a is formed on the surface of a semiconductor substrate 1. Pads are formed by a first-layer pad 5, a second-layer pad 9, and a third-layer pad 13 made of a metal material formed within the substrate recess 1a. The final insulation film 15 on the third-layer pad 13 is removed and a pad opening 15a is formed. The third-layer pad 13 positioned at an upper-layer side includes a pad recess 13a caused by the substrate recess 1a. An upper surface of the pad recess 13a is disposed below the surface of the semiconductor substrate 1. <P>COPYRIGHT: (C)2011,JPO&INPIT |
