METHOD OF MANUFACTURING GROUP III NITRIDE SEMICONDUCTOR LIGHT-EMITTING DEVICE, METHOD OF FORMING ELECTRODE FOR GROUP III NITRIDE SEMICONDUCTOR DEVICE, AND THE GROUP III NITRIDE SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a method of manufacturing a group III nitride semiconductor light-emitting device for forming an exposure area of a group III nitride with excellent position controllability to an opening of an insulation film. SOLUTION: A group III nitride semiconductor region 29 including a contact layer 27 and a cladding layer 25 is etched by a mask 35a to form a group III nitride region 33c and an epitaxial region 29b. Then, an insulation film 39 is grown on the mask 35a, a pattern-formed group III nitride lift-off layer 31a, and a pattern-formed group III nitride semiconductor region 33c. The insulation film 39 includes: a first part 39a film-formed on the mask 35a; and a second part 39b film-formed on the pattern-formed group-III nitride semiconductor region 33c. Then, the pattern-formed group III nitride lift-off layer 31a is selectively removed by an etchant to the insulation film 39, and an insulation film 39b including an opening 39c is formed by a lift-off method. COPYRIGHT: (C)2011,JPO&INPIT