| 摘要 |
A semiconductor device includes a substrate on which a GaN channel layer, an AlGaN electron supply layer and a GaN cap layer are stacked in this order, a gate electrode formed on the GaN cap layer, and a source electrode and a drain electrode formed on the AlGaN electron supply layer so as to interpose the gate electrode. A first recess is formed in the GaN cap layer and being located between the gate electrode and the source electrode. A thickness of the GaN cap layer in a bottom of the first recess is less than that of the GaN cap layer located under the gate electrode.
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