| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a photoelectric conversion device whose conversion efficiency is improved by suppressing a leakage current. <P>SOLUTION: The photoelectric conversion device 100 includes: a photoelectric conversion layer 3 having two power generation cell layers 91 and 92 on a substrate 1; and an intermediate contact layer 5 interposed between the two power generation cell layers 91 and 92. The intermediate contact layer 5 principally comprises ZnO to which Ga<SB>2</SB>O<SB>3</SB>is added, and also contains nitrogen atoms, the intermediate contact layer 5 having been subjected to hydrogen plasma exposure having a sheet resistance of 1 to 100 kΩ/sq. <P>COPYRIGHT: (C)2011,JPO&INPIT</p> |
