| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a lateral diffusion metal oxide semiconductor (LDMOS) transistor, and a method for manufacturing the transistor. <P>SOLUTION: The LDMOS transistor includes an n-type epitaxial layer formed on a p-type substrate and an asymmetric conductive spacer which acts as its gate. The LDMOS transistor also includes a source region and a drain region at both sides of the asymmetric conductive spacer, and a channel region formed by ion implantation on the asymmetric conductive spacer. The height of the asymmetric conductive spacer increases from the source region toward the drain region. The channel region is essentially completely under the asymmetric conductive spacer and has a shorter length than that of the channel region of the prior art LDMOS transistor. This LDMOS transistor also includes a field oxide layer surrounding an active region of the transistor, and a thin dielectric layer isolating the asymmetric conductive spacer from the n-type epitaxial layer. <P>COPYRIGHT: (C)2011,JPO&INPIT</p> |
