| 摘要 |
A semi-conductor body is formed by coating a substrate such as Si with a mask of a metal which can form a volatile oxide, e.g. Mo, W and V, vapour depositing a semi-conductor such as Si on the mask and the exposed area of the substrate and then volatilizing the mask by connecting it to the oxide. The masking metal may be vapour deposited or electrolytically deposited. |
