MAGNETIC RECORDING ELEMENT, MAGNETIC MEMORY CELL, AND MAGNETIC RANDOM ACCESS MEMORY

摘要

A low-power consumption non-volatile memory employing an electric field write magnetic recording element is provided. A multiferroic layer 301 is provided adjacent to a magnetic recording layer 2002, and by applying an electric field to the multiferroic layer to control the dielectric state of the multiferroic, the magnetization direction of the magnetic recording layer is controlled and information is written. Reading is performed by electrically detecting the magnetization direction of the magnetic recording layer by way of a magnetoresistive effect.