摘要 |
The invention relates to a thermoelectrically active p- or n-conductive semiconductor material constituted by a compound of the general formula (I) (PbTe)1−x(Sn2±ySb2±zTe5)x  (I) with 0.0001≦̸x≦̸0.5, 0≦̸y<2 and 0≦̸z<2, wherein 0 to 10% by weight of the compound may be replaced by other metals or metal compounds, wherein the semiconductor material has a Seebeck coefficient of at least |S|≧60 μV/K at a temperature of 25° C. and electrical conductivity of at least 150 S/cm and power factor of at least 5 μW/(cm·K2), further relates to a process for the preparation of such semiconductor materials, as well as to generators and Peltier arrangements containing them.
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