Förfarande och struktur för att skydda ett passiverande skikt

摘要

The present invention relates to a method for protecting a passivating layer (2) comprising aluminum oxide and being formed on a surface of a silicon substrate (1) from effects caused by chemical interaction between the passivating layer (2) and a conducting electrode (4) by fabricating a barrier layer (3) between the passivating layer (2) and the conducting electrode (4). Further, the present invention relates to a corresponding structure and its use.