摘要 |
<p>The device has an N-channel metal oxide semiconductor FET (MOSFET) (T10) mounted with respect to another N-channel metal oxide semiconductor FET (MOSFET) (T1), in a flip-flop manner. The former MOSFET is associated to small diodes (D1, D2) and low power diodes that limit the gate-source voltage of the later MOSFET in an inactive state, and prevents the gate voltage of the former MOSFET to be equal to the control voltage (V). A resistor (R) rapidly restores the gate-source voltage of the later MOSFET to zero during the passage of the device from the active state to the inactive state.</p> |