| 摘要 |
PROBLEM TO BE SOLVED: To reduce resistance without causing other problems, in a microfabricated transistor. SOLUTION: A silicide layer 9 is formed on a surface layer of a source and drain region 8 and a source and drain expansion region 6. The silicide layer 9 is closed to inside of a semiconductor substrate 1 (lower side in the figure) as closing from the center of the source and drain region 8 to a channel region when seen in a cross section vertical to the semiconductor substrate 1 and parallel to a gate width direction. An end on the channel region side is elongated in the source and drain expansion region 6. COPYRIGHT: (C)2011,JPO&INPIT
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