| 摘要 |
<p>Disclosed are: a device having good characteristics and long life, wherein a functional thin film is formed in a desired region by a coating method; a thin film transistor; a method for manufacturing the device; and a method for manufacturing the thin film transistor. Specifically disclosed is a device which is characterized by comprising a substrate, a first electrode that is formed on the substrate, a functional thin film that is formed above the first electrode, and a second electrode that is provided above the functional thin film. The device is also characterized by additionally comprising, in a region surrounding the region where the functional thin film is formed, a film that contains a compound wherein a group containing a fluorine atom and a p-conjugated system are bonded by a cycloalkene structure or a cycloalkane structure.</p> |
| 申请人 |
INSTITUTE OF SYSTEMS, INFORMATION TECHNOLOGIES AND NANOTECHNOLOGIES;PANASONIC CORPORATION;SUMITOMO CHEMICAL COMPANY, LIMITED;SHINKAI, SEIJI;HARAGUCHI, SHUICHI;SHIRAKI, TOMOHIRO;OGAWA, MASASHI;NAKATANI, SHUHEI;SAKANOUE, KEI;GOTO, OSAMU;KAKIMOTO, HIDENOBU |
发明人 |
SHINKAI, SEIJI;HARAGUCHI, SHUICHI;SHIRAKI, TOMOHIRO;OGAWA, MASASHI;NAKATANI, SHUHEI;SAKANOUE, KEI;GOTO, OSAMU;KAKIMOTO, HIDENOBU |
