发明名称 |
VAPOR PHASE DEPOSITION PROCESSES FOR DOPING SILICON |
摘要 |
A process of doping a silicon layer with dopant atoms generally includes reacting a vapor of a dopant precursor with oxide and/or hydroxide reactive sites present on the silicon layer to form a self assembled monolayer of dopant precursor; hydrolyzing the self assembled monolayer of the dopant precursor with water vapor to form pendant hydroxyl groups on the dopant precursor; capping the self assembled monolayer with an oxide layer; and annealing the silicon layer at a temperature effective to diffuse dopant atoms from the dopant precursor into the silicon layer. Additional monolayers can be formed in a similar manner, thereby providing controlled layer-by-layer vapor phase deposition of the dopant precursor compounds for controlled doping of silicon.
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申请公布号 |
US2011124187(A1) |
申请公布日期 |
2011.05.26 |
申请号 |
US20090625835 |
申请日期 |
2009.11.25 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
AFZALI-ARDAKANI ALI;FARMER DAMON B.;SEKARIC LIDIJA |
分类号 |
H01L21/22 |
主分类号 |
H01L21/22 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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