发明名称 |
INTEGRATED CIRCUIT INCLUDING FINFET RF SWITCH ANGLED RELATIVE TO PLANAR MOSFET AND RELATED DESIGN STRUCTURE |
摘要 |
An integrated circuit (IC) includes a fin field effect transistor (FinFET) radio frequency (RF) switch; and a planar complementary metal-oxide semiconductor field effect transistor (MOSFET). The planar MOSFET has a channel on a <100> wafer plane and the FinFET RF switch has a channel on a <100> fin plane. The FinFET RF switch and the planar MOSFET can be oriented at approximately 45° with respect to one another.
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申请公布号 |
US2011121369(A1) |
申请公布日期 |
2011.05.26 |
申请号 |
US20090622733 |
申请日期 |
2009.11.20 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
ANDERSON BRENT A.;JOSEPH ALVIN J.;NOWAK EDWARD J. |
分类号 |
H01L27/12;G06F17/50 |
主分类号 |
H01L27/12 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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