发明名称 INTEGRATED CIRCUIT INCLUDING FINFET RF SWITCH ANGLED RELATIVE TO PLANAR MOSFET AND RELATED DESIGN STRUCTURE
摘要 An integrated circuit (IC) includes a fin field effect transistor (FinFET) radio frequency (RF) switch; and a planar complementary metal-oxide semiconductor field effect transistor (MOSFET). The planar MOSFET has a channel on a <100> wafer plane and the FinFET RF switch has a channel on a <100> fin plane. The FinFET RF switch and the planar MOSFET can be oriented at approximately 45° with respect to one another.
申请公布号 US2011121369(A1) 申请公布日期 2011.05.26
申请号 US20090622733 申请日期 2009.11.20
申请人 INTERNATIONAL BUSINESS MACHINES CORPORATION 发明人 ANDERSON BRENT A.;JOSEPH ALVIN J.;NOWAK EDWARD J.
分类号 H01L27/12;G06F17/50 主分类号 H01L27/12
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