发明名称 LINE FORMING MASK AND FORMING METHOD FOR LINE USING THE SAME
摘要 <p>PURPOSE: A line forming mask and a forming method for line using the same are provided to improve a production yield by using a matrix mask for forming a line to improve the simplification of a process. CONSTITUTION: In a line forming mask and a forming method for line using the same, a body(160) has a size corresponding to a wafer(150). An insulating property mesh pattern(162) is formed on the body into a matrix shape. The body and insulating property mesh pattern are formed with the same material. The body and the insulating property mesh pattern are processed by a laser to form a mask having a reserved wire path. The reserved wire path is penetrated through a part of the body and the insulating property mesh pattern.</p>
申请公布号 KR20110055972(A) 申请公布日期 2011.05.26
申请号 KR20090112620 申请日期 2009.11.20
申请人 HYNIX SEMICONDUCTOR INC. 发明人 KIM, SI HAN
分类号 H01L21/027 主分类号 H01L21/027
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