| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a semiconductor device that secures high reliability at even a high temperature region by: decreasing a thermal resistance in a peripheral region of a semiconductor element; and also decreasing a thermal stress of the semiconductor element. <P>SOLUTION: Two electrodes are provided on both sides of the semiconductor device, respectively, and a plurality of slits are provided on each of the sides thereof opposite to the junction surface of the two electrodes. Bending rigidity is lowered and the directions of the slits of the two electrodes are displaced by 90°to be vertical. <P>COPYRIGHT: (C)2011,JPO&INPIT</p> |
