发明名称 MANUFACTURING METHOD OF FLEXIBLE SEMICONDUCTOR DEVICE
摘要 A method includes the steps of preparing a multilayer film 80 formed by sequentially stacking a first metal layer 10, an inorganic insulating layer 20, a semiconductor layer 30, and a second metal layer 40; forming a source electrode 42s and a drain electrode 42d comprised of the second metal layer 40 by etching the second metal layer 40; pressure-bonding a resin layer 50 onto a surface of the multilayer film 80 provided with the source electrode 42s and the drain electrode 42d to burry the source electrode 42s and the drain electrode 42d in the resin layer 50; and forming a gate electrode 10g comprised of the first metal layer 10 by etching the first metal layer 10. The inorganic insulating layer 20g functions as a gate insulating film. The semiconductor layer 30 functions as a channel.
申请公布号 US2011121298(A1) 申请公布日期 2011.05.26
申请号 US201013054049 申请日期 2010.02.05
申请人 ICHIRYU TAKASHI;NAKATANI SEIICHI;HIRANO KOICHI 发明人 ICHIRYU TAKASHI;NAKATANI SEIICHI;HIRANO KOICHI
分类号 H01L29/786;H01L21/336 主分类号 H01L29/786
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