发明名称 THROUGH-SUBSTRATE VIAS WITH POLYMER FILL AND METHOD OF FABRICATING SAME
摘要 An through-substrate via fabrication method requires forming a through-substrate via hole in a semiconductor substrate, depositing an electrically insulating, continuous and substantially conformal isolation material onto the substrate and interior walls of the via using ALD, depositing a conductive material into the via and over the isolation material using ALD such that it is electrically continuous across the length of the via hole, and depositing a polymer material over the conductive material such that any continuous top-to-bottom openings present in the via holes are filled by the polymer material. The basic fabrication method may be extended to provide vias with multiple conductive layers, such as coaxial and triaxial vias.
申请公布号 US2011121427(A1) 申请公布日期 2011.05.26
申请号 US201113014585 申请日期 2011.01.26
申请人 TELEDYNE SCIENTIFIC & IMAGING, LLC 发明人 STUPAR PHILIP A.;DENATALE JEFFREY F.;BORWICK, III ROBERT L.;PAPAVASILIOU ALEXANDROS P.
分类号 H01L23/48;H01L21/02;H01L21/441;H01L21/768;H01L29/92 主分类号 H01L23/48
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