| 摘要 |
The invention relates to facilities for manufacturing solar elements. A method for forming CdTe base layers for film solar elements comprises creating a substrate using optically transparent material with deposition of (TCO) and CdS transparent conductive oxide layers, positioning the substrate and the source CdTe in partly closed volume, distant one from another, air elimination of said volume up to 10-3 Pa, heating the substrate up to first temperature – substrate temperature, heating a portion of wall surface up to second temperature– temperature of CdTe source, further deposition of CdTe layer to substrate on the side of CdS layer by hold of the substrate during the required time in partly closed volume under condition like to thermodynamic equilibrium. Using vacuum thermal evaporation of a CdTe layer, speed of deposition of no less than 5 nm/s, pressure seal of partly closed volume and heating all wall surfaces (except the wall surface adjacent to aria of condensation of CdTe to surface) is performed. Heating is performed up to temperature which exceeds substrate temperature no less than for 5 °C with provision at least 95 % CdTe mass consumption from vapor phase, during process of deposition CdTe layer to the substrate a second temperature Tis set depending on a first temperature within temperature range of 300 °C to 450 °C, according to expression T=A∙(T)+B∙T+C, where coefficients are chosen experimentally from range of values A=-8∙10÷-2∙10(1/°C), B=1,031÷1,033, C=107÷111 (°C), The following condition is maintained the CdTe vapor temperature in partly closed volume does not exceed more than 10 % differ from temperature of source CdTe, pressure of CdTe vapor in partly closed volume does not exceed more than 10 % from vapor-pressure equilibrium CdTe vapour with temperature equals to the set temperature in accordance to formula of CdTe source temperature, consumption of CdTe vapour from gaseous phase is fully compensated by mass consumption of CdTe from the source in cadmium and tellurium steam cloud, due to exceeding aria of material surface of CdTe source relative to substrate aria, where deposition of CdTe is performed. The device comprises a dismountable evaporation chamber, an evacuation devices connected to the evaporation chamber, a CdTe source for evaporation and heating devices can provide condition for deposition of CdTe. The invention provides reduce energy and materials consumption of solar elements manufacturing. |
