| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a manufacturing method of a flow sensor capable of inhibiting the drop in the TCR(temperature coefficient of resistor) of a resistor film made of a metal and the variation per hour of the resistance value and the TCR as little as possible. SOLUTION: In the manufacturing method of the flow sensor, a lower insulating film 2, a sticking layer 7 made of Ti, resistor films 3-5 made of Pt, a film of SO2 81 and a film of SiN 82 are in turn formed on a substrate 1. After forming the resistor films 3-5, an operation annealing the resistor films 3-5 is carried out in the atmosphere containing oxygen, and then, after forming the film of SO2 81 an operation annealing the film of SO2 81 is carried out using the furnace anneal, and the film of SiN 82 is formed by using the depressing CVD method.</p> |
