发明名称 METHOD OF FORMING GRAPHENE PATTERN UTILIZING IMPRINT
摘要 <p>PURPOSE: A method for forming a graphene using an imprint method is provided to prevent metal contamination by omitting a graphite catalyst through an etching process. CONSTITUTION: A patterned imprint stamp(210) is manufactured. The imprint stamp is made of graphite catalyst. A graphene(220) is formed by supplying and processing vapor carbon supply source to the imprint stamp thermally. The graphene formed on the imprint stamp is transferred on the substrate by using the imprint method. A graphene pattern(240) is formed on the substrate for manufacturing a device.</p>
申请公布号 KR20110054386(A) 申请公布日期 2011.05.25
申请号 KR20090111008 申请日期 2009.11.17
申请人 KOREA ADVANCED NANO FAB CENTER 发明人 YOO, SEUNG HWAN;KANG, HO KWAN;PARK, HYEONG HO;OH, IL WHAN;SHIN, KI SOO
分类号 H01L21/027 主分类号 H01L21/027
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