| 摘要 |
<p>A surface emitting semiconductor laser device which can be manufactured easily and inexpensively and in which the direction of polarization of a laser beam can be controlled into a fixed direction. An oxidizing treatment is applied to a current confinement layer to form a current passage region in a rectangular shape having an in-plane anisotropy. In addition, a pair of trenches with their side surfaces, on the side of a beam outgoing aperture, set to be parallel to either of the diagonal direction of the current passage region is provided at opposite positions with the beam outgoing aperture as a center therebetween. The direction of polarization of the laser beam made to go out through the beam outgoing aperture is specified into only one direction, whereby the direction of polarization can be accurately controlled to a fixed direction. Besides, where the trench or trenches are filled with a metallic material or insulating material which is absorptive with respect to the laser beam, the polarization ratio of the laser beam is further enhanced.</p> |
