发明名称 |
SEMICONDUCTOR LIGHT EMITTING DEVICES GROWN ON COMPOSITE SUBSTRATES |
摘要 |
A plurality of III-nitride semiconductor structures, each including a light emitting layer disposed between an n-type region and a p-type region, are grown on a composite substrate. The composite substrate includes a plurality of islands of III-nitride material connected to a host by a bonding layer. The plurality of III-nitride semiconductor structures are grown on the III-nitride islands. The composite substrate may be formed such that each island of III-nitride material is at least partially relaxed. As a result, the light emitting layer of each semiconductor structure has an a-lattice constant greater than 3.19 angstroms. |
申请公布号 |
KR20110055745(A) |
申请公布日期 |
2011.05.25 |
申请号 |
KR20117009159 |
申请日期 |
2009.09.21 |
申请人 |
PHILIPS LUMILEDS LIGHTING COMPANY, LLC;KONINKLIJKE PHILIPS ELECTRONICS N.V. |
发明人 |
MCLAURIN MELVIN B.;KRAMES MICHAEL R. |
分类号 |
H01L27/15;H01L33/08;H01L33/12;H01L33/50 |
主分类号 |
H01L27/15 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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