METHOD OF MANUFACTURING LED USING METALLIC PROTECTION LAYER

摘要

PURPOSE: A method for manufacturing a light emitting diode using a metal protection layer is provided to prevent the property deterioration of an LED device by forming a protection layer without plasma damages. CONSTITUTION: A metal protection layer(250) is formed on an n-type nitride semiconductor layer(240). A part of the surface of the n type nitride semiconductor is exposed by patterning the metal protection layer. The surface of the n type nitride semiconductor layer is roughened by treating the exposed surface of the n type nitride semiconductor layer. The n type nitride semiconductor layer is an isolated n-GaN formed on a Cu plating.