发明名称 Methods of forming conductive features and structures thereof
摘要 Methods of forming features and structures thereof are disclosed. In one embodiment, a method of forming a feature includes forming a first material over a workpiece, forming a first pattern for a lower portion of the feature in the first material, and filling the first pattern with a sacrificial material. A second material is formed over the first material and the sacrificial material, and a second pattern for an upper portion of the feature is formed in the second material. The sacrificial material is removed. The first pattern and the second pattern are filled with a third material.
申请公布号 US7947606(B2) 申请公布日期 2011.05.24
申请号 US20080129479 申请日期 2008.05.29
申请人 INFINEON TECHNOLOGIES AG 发明人 YAN JIANG;HAMPP ROLAND;HAN JIN-PING;ELLER MANFRED;GUTMANN ALOIS
分类号 H01L21/311 主分类号 H01L21/311
代理机构 代理人
主权项
地址