发明名称 |
Manufacturing method and manufacturing apparatus of semiconductor substrate |
摘要 |
It is an object to provide a homogeneous semiconductor substrate in which defective bonding is reduced. Such a semiconductor substrate can be formed by the steps of: disposing a first substrate in a substrate bonding chamber which includes a substrate supporting base where a plurality of openings is provided, substrate supporting mechanisms provided in the plurality of openings, and raising and lowering mechanisms which raise and lower the substrate supporting mechanisms; disposing a second substrate over the first substrate so as not to be in contact with the first substrate; and bonding the first substrate to the second substrate by using the raising and lowering mechanisms to raise the substrate supporting mechanisms.
|
申请公布号 |
US7947570(B2) |
申请公布日期 |
2011.05.24 |
申请号 |
US20090350984 |
申请日期 |
2009.01.09 |
申请人 |
SEMICONDUCTOR ENERGY LABORATORY CO., LTD. |
发明人 |
OMATA TAKATSUGU;MORIWAKA TOMOAKI;OHNUMA HIDETO |
分类号 |
H01L21/77;H01L21/78 |
主分类号 |
H01L21/77 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|