发明名称 Manufacturing method and manufacturing apparatus of semiconductor substrate
摘要 It is an object to provide a homogeneous semiconductor substrate in which defective bonding is reduced. Such a semiconductor substrate can be formed by the steps of: disposing a first substrate in a substrate bonding chamber which includes a substrate supporting base where a plurality of openings is provided, substrate supporting mechanisms provided in the plurality of openings, and raising and lowering mechanisms which raise and lower the substrate supporting mechanisms; disposing a second substrate over the first substrate so as not to be in contact with the first substrate; and bonding the first substrate to the second substrate by using the raising and lowering mechanisms to raise the substrate supporting mechanisms.
申请公布号 US7947570(B2) 申请公布日期 2011.05.24
申请号 US20090350984 申请日期 2009.01.09
申请人 SEMICONDUCTOR ENERGY LABORATORY CO., LTD. 发明人 OMATA TAKATSUGU;MORIWAKA TOMOAKI;OHNUMA HIDETO
分类号 H01L21/77;H01L21/78 主分类号 H01L21/77
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